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STFW4N150
STP4N150, STW4N150
N-channel 1500 V, 5 , 4 A, PowerMESHTM Power MOSFET
in TO-220, TO-247, TO-3PF
Features
Type VDSS RDS(on) max ID Pw
STFW4N150 1500 V <7 4A 63 W
<7
3
STP4N150 1500 V 4A 160 W 1
2 3
2
STW4N150 1500 V <7 4A 160 W TO-220
1
TO-247
100% avalanche tested
Intrinsic capacitances and Qg minimized
High speed switching 2
3
1
Fully isolated TO-3PF plastic packages TO-3PF
Creepage distance path is 5.4 mm (typ.) for
TO-3PF
Application Figure 1. Internal schematic diagram.
Switching applications
Description
Using the well consolidated high voltage MESH
OVERLAYTM process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
company's proprietary edge termination structure,
gives the lowest RDS(on) per area, unrivalled gate
charge and switching characteristics.
Table 1. Device summary
Order codes Marking Package Packaging
STFW4N150 4N150 TO-3PF Tube
STP4N150 P4N150 TO-220 Tube
STW4N150 W4N150 TO-247 Tube
July 2009 Doc ID 11262 Rev 9 1/15
www.st.com 15
Contents STFW4N150, STP4N150, STW4N150
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15 Doc ID 11262 Rev 9
STFW4N150, STP4N150, STW4N150 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol Parameter Unit
TO-220 TO-247 TO-3PF
VDS Drain-source voltage (VGS = 0) 1500 V
VGS Gate- source voltage