2n6782_irff110.pdf part of International Rectifier 2n6782 irff110 2n6782_irff110.pdf, . Electronic Components Datasheets Active components Transistors International Rectifier 2n6782

Text preview for : 2n6782_irff110.pdf part of International Rectifier 2n6782 irff110 . Electronic Components Datasheets Active components Transistors International Rectifier 2n6782_irff110.pdf

Back to : 2n6782_irff110.pdf | Home

PD - 90423C

IRFF110
REPETITIVE A ALANCHE AND dv/dt RATED
V JANTX2N6782

HEXFET TRANSISTORS JANTXV2N6782
THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556
100V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRFF110 100V .60 3.5A

The HEXFET technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis- TO-39
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt- Features:
age control, very fast switching, ease of parelleling n Repetitive Avalanche Ratings
and temperature stability of the electrical parameters. n Dynamic dv/dt Rating
They are well suited for applications such as switch- n Hermetically Sealed
ing power supplies, motor controls, inverters, chop- n Simple Drive Requirements
pers, audio amplifiers and high energy pulse circuits. n Ease of Paralleling

Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25