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November 1998

FDS6875
Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description Features

These P-Channel 2.5V specified MOSFETs are -6 A, -20 V. RDS(ON) = 0.030 @ VGS = -4.5 V,
produced using Fairchild Semiconductor's advanced RDS(ON) = 0.040 @ VGS = -2.5 V.
PowerTrench process that has been especially tailored to
Low gate charge (23nC typical).
minimize the on-state resistance and yet maintain low gate
charge for superior switching performance. High performance trench technology for extremely low
These devices are well suited for portable electronics RDS(ON).
applications: load switching and power management,
battery charging and protection circuits. High power and current handling capability.

SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16

D2
D2 5 4
D1 S
D1 FD 75 6 3
68
7 2
G2
S2
G1 8 1
SO-8 pin 1
S1

Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter FDS6875 Units
VDSS Drain-Source Voltage -20 V
VGSS Gate-Source Voltage