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STD150N3LLH6
STP150N3LLH6, STU150N3LLH6
N-channel 30 V, 0.0024 , 80 A, DPAK, IPAK, TO-220
STripFETTM VI DeepGATETM Power MOSFET

Features
Type VDSS RDS(on) max ID
STD150N3LLH6 30 V 0.0028 80 A
3 3
STP150N3LLH6 30 V 0.0033 80 A 1 1
2

STu150N3LLH6 30 V 0.0033 80 A IPAK
DPAK
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
3
2
High avalanche ruggedness 1

Low gate drive power losses TO-220

Application
Switching applications
Figure 1. Internal schematic diagram

Description
This product utilizes the 6th generation of design
rules of ST's proprietary STripFETTM technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.

Table 1. Device summary
Order codes Marking Package Packaging

STD150N3LLH6 150N3LLH6 DPAK Tape and reel
STP150N3LLH6 150N3LLH6 TO-220 Tube
STU150N3LLH6 150N3LLH6 IPAK Tube

September 2009 Doc ID 15227 Rev 3 1/16
www.st.com 16
Contents STD150N3LLH6, STP150N3LLH6, STU150N3LLH6

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ......................... 6

3 Test circuit ............................................... 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

2/16 Doc ID 15227 Rev 3
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings
Symbol Parameter Value Unit

VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage