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VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
N-Channel Enhancement-Mode MOSFET Transistors
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)
VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32
VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18
60
VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28
VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: 2.5 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOS
D Low Threshold: <2.1 V D Low-Voltage Operation D Solid State Relays
D Low Input Capacitance: 22 pF D Easily Driven Without Buffering D Drivers: Relays, Solenoids, Lamps, Hammers,
D Fast Switching Speed: 7 ns D High-Speed Circuits Displays, Memories, Transistors, etc.
D Low Input and Output D Low Error Voltage D Battery Operated Systems
Leakage
TO-226AA TO-236
(TO-92) TO-92S (SOT-23)
S 1 S 1
G 1
3 D
G 2 G 2
S 2
D D
3 3
Top View
Top View Top View VN0605T (V2)*
VN0610LL VN10LLS *Marking Code for TO-236
VN2222LL
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol VN10LLS VN0605T VN0610LL VN2222LL Unit
Drain-Source Voltage VDS 60 60 60 60
Gate-Source Voltage--Non-Repetitiveb VGSM "30 "30 "30 "30 V
Gate-Source Voltage--Continuous VGS "20 "20 "20 "20
Continuous Drain Current TA= 25_C 0.32 0.18 0.28 0.23
ID
(TJ = 150_C) TA= 100_C 0.2 0.11 0.17 0.14 A
Pulsed Drain Currenta IDM 1.4 0.72 1.3 1.0
TA= 25_C 0.9 0.36 0.8 0.8
Power Dissipation PD W
TA= 100_C 0.4 0.14 0.32 0.32
Maximum Junction-to-Ambient RthJA 139 350 156 156 _C/W
Operating Junction and
TJ, Tstg