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PD - 93831
RADIATION HARDENED IRHF57234SE
POWER MOSFET 250V, N-CHANNEL
THRU-HOLE (TO-39) R5
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHF57234SE 100K Rads (Si) 0.42 5.4A
TO-39
International Rectifier's R5TM technology provides
high performance power MOSFETs for space appli- Features:
cations. These devices have been characterized for n Single Event Effect (SEE) Hardened
Single Event Effects (SEE) with useful performance n Ultra Low RDS(on)
up to an LET of 80 (MeV/(mg/cm2)). The combination
n Neutron Tolerant
of low RDS(on) and low gate charge reduces the power n Identical Pre- and Post-Electrical Test Conditions
losses in switching applications such as DC to DC n Repetitive Avalanche Ratings
converters and motor control. These devices retain n Dynamic dv/dt Ratings
all of the well established advantages of MOSFETs
n Simple Drive Requirements
such as voltage control, fast switching, ease of paral-
n Ease of Paralleling
leling and temperature stability of electrical param-
n Hermetically Sealed
eters.
Absolute Maximum Ratings Pre-Irradiation
Parameter Units
ID @ VGS = 12V, TC = 25