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DISCRETE SEMICONDUCTORS

DATA SHEET

BF510 to 513
N-channel silicon field-effect
transistors
Product specification December 1997
File under Discrete Semiconductors, SC07
Philips Semiconductors Product specification

N-channel silicon field-effect transistors BF510 to 513

DESCRIPTION MARKING CODE
Asymmetrical N-channel planar BF510 = S6p
epitaxial junction field-effect BF511 = S7p
transistors in the miniature plastic
BF512 = S8p
envelope intended for applications up
to the v.h.f. range in hybrid thick and BF513 = S9p
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
handbook, halfpage 3
(BF511) and mains radios (BF512) or
the mixer stage (BF513). d
g
s

PINNING - SOT23
1 2
1 = gate Top view MAM385
2 = drain
3 = source

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA
Drain-source voltage VDS max. 20 V
Drain current (DC or average) ID max. 30 mA
Total power dissipation
up to Tamb = 40