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December 1998

NDT456P
P-Channel Enhancement Mode Field Effect Transistor
General Description Features
Power SOT P-Channel enhancement mode power field -7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 V
effect transistors are produced using Fairchild's RDS(ON) = 0.045 @ VGS = -4.5 V.
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to High density cell design for extremely low RDS(ON).
minimize on-state resistance and provide superior
switching performance. These devices are particularly High power and current handling capability in a widely
suited for low voltage applications such as notebook used surface mount package.
computer power management, battery powered circuits,
and DC motor control.

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D D

G D S G S

Absolute Maximum Ratings TA = 25