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FDT439N
June 1999

FDT439N
N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

General Description Features
This N-Channel Enhancement mode field effect transistor 6.3 A, 30 V. RDS(on) = 0.045 @ VGS = 4.5 V
is produced using Fairchild Semiconductor's proprietary,
high cell density, DMOS technology. This very high RDS(on) = 0.058 @ VGS = 2.5 V
density process is especially tailored to minimize on-
state resistance, and provide superior switching Fast switching speed.
performance. These products are well suited to low
voltage, low current applications such as notebook High power and current handling capabitlity in a
computer power management, battery powered widely used surface mount package.
circuits, and DC motor control.

Applications
DC/DC converter
Load switch
Motor driving

D D
D
D

S
S
D G
G SOT-223 * G S
G D S
SOT-223 (J23Z)

Absolute Maximum Ratings TA = 25