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April 1996

NDP6060L / NDB6060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features

These logic level N-Channel enhancement mode power 48A, 60V. RDS(ON) = 0.025 @ VGS = 5V.
field effect transistors are produced using Fairchild's Low drive requirements allowing operation directly from logic
proprietary, high cell density, DMOS technology. This drivers. VGS(TH) < 2.0V.
very high density process has been especially tailored to
minimize on-state resistance, provide superior switching Critical DC electrical parameters specified at elevated
performance, and withstand high energy pulses in the temperature.
avalanche and commutation modes. These devices are Rugged internal source-drain diode can eliminate the need
particularly suited for low voltage applications such as for an external Zener diode transient suppressor.
automotive, DC/DC converters, PWM motor controls,
and other battery powered circuits where fast switching, 175