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STD7NM60N, STF7NM60N
STP7NM60N, STU7NM60N
N-channel 600 V, 5 A, 0.76 DPAK, TO-220FP, TO-220, IPAK
,
second generation MDmeshTM Power MOSFET

Features
VDSS @ RDS(on)
Order codes ID
TJmax max. 3
2 3
1 2
STD7NM60N 1

STF7NM60N IPAK TO-220
650 V < 0.9 5A
STP7NM60N
STU7NM60N
3
100% avalanche tested 1
3
2
Low input capacitance and gate charge DPAK 1

TO-220FP
Low gate input resistance

Application
Switching applications Figure 1. Internal schematic diagram

Description
These devices are N-channel Power MOSFETs
realized using the second generation of
MDmeshTM technology. It applies the benefits of
the multiple drain process to STMicroelectronics'
well-known PowerMESHTM horizontal layout
structure. The resulting product offers improved
on-resistance, low gate charge, high dv/dt
capability and excellent avalanche characteristics.

Table 1. Device summary
Order codes Marking Package Packaging

STD7NM60N DPAK Tape and reel
STF7NM60N TO-220FP Tube
7NM60N
STP7NM60N TO-220 Tube
STU7NM60N IPAK Tube

October 2010 Doc ID 16472 Rev 3 1/17
www.st.com 17
Contents STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuits .............................................. 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

2/17 Doc ID 16472 Rev 3
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings
Value
Symbol Parameter Unit
TO-220, IPAK,
TO-220FP
DPAK

VDS Drain-source voltage (VGS = 0) 600 V
VGS Gate-source voltage