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TECHNICAL DATA

NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/366

Devices Qualified Level
JAN
2N3498 2N3499 2N3500 2N3501 JANTX
2N3498L 2N3499L 2N3500L 2N3501L JANTXV
JANS

MAXIMUM RATINGS
2N3498* 2N3500*
Ratings Symbol 2N3499* 2N3501* Unit
Collector-Emitter Voltage VCEO 100 150 Vdc
Collector-Base Voltage VCBO 100 150 Vdc
Emitter-Base Voltage VEBO 6.0 6.0 Vdc
Collector Current IC 500 300 mAdc TO-5*
Total Power Dissipation @ TA = 250C (1) 1.0 W 2N3498L, 2N3499L
PT 2N3500L, 2N3501L
@ TC = 250C (2) 5.0 W
0
Operating & Storage Junction Temp. Range TJ, Tstg -55 to +200 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance: Junction-to-Case RJC 35 0
C/W
Junction-to-Ambient RJA 175 TO-39* (TO-205AD)
*Electrical characteristics for "L" suffix devices are identical to the "non L" corresponding devices 2N3498, 2N3499
1) Derate linearly 5.71 W/0C for TA > 250C 2N3500, 2N3501
2) Derate linearly 28.6 W/0C for TC > 250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc 2N3498, 2N3499 V(BR)CEO 100 Vdc
2N3500, 2N3501 150
Collector-Base Cutoff Current
VCB = 50 Vdc 2N3498, 2N3499 50 Adc
VCB = 75 Vdc 2N3500, 2N3501 ICBO 50 Adc
VCB = 100 Vdc 2N3498, 2N3499 10