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July 1999
FDG6301N
Dual N-Channel, Digital FET
General Description Features
These dual N-Channel logic level enhancement mode 25 V, 0.22 A continuous, 0.65 A peak.
field effect transistors are produced using Fairchild's RDS(ON) = 4 @ VGS= 4.5 V,
proprietary, high cell density, DMOS technology. This RDS(ON) = 5 @ VGS= 2.7 V.
very high density process is especially tailored to
minimize on-state resistance. This device has been Very low level gate drive requirements allowing direct
designed especially for low voltage applications as a operation in 3 V circuits (VGS(th) < 1.5 V).
replacement for bipolar digital transistors and small
Gate-Source Zener for ESD ruggedness
signal MOSFETs. (>6kV Human Body Model).
Compact industry standard SC70-6 surface mount
package.
SC70-6 SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223
S2
G2 1 or 4 *
6 or 3
D1 .01
2 or 5 5 or 2
D2
G1
S1
SC70-6 3 or 6 4 or 1 *
*The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Units inside the carrier can be of either orientation and will not affect the functionality of the device.
Absolute Maximum Ratings TA = 25