buk9515-100a_buk9615-100a.pdf part of Philips buk9515-100a buk9615-100a buk9515-100a_buk9615-100a.pdf, . Electronic Components Datasheets Active components Transistors Philips buk9515-100a

Text preview for : buk9515-100a_buk9615-100a.pdf part of Philips buk9515-100a buk9615-100a . Electronic Components Datasheets Active components Transistors Philips buk9515-100a_buk9615-100a.pdf

Back to : buk9515-100a_buk9615-100a | Home

Philips Semiconductors Product specification

TrenchMOS transistor BUK9515-100A
Logic level FET BUK9615-100A

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope available in VDS Drain-source voltage 100 V
TO220AB and SOT404 . Using ID Drain current (DC) 75 A
'trench' technology which features Ptot Total power dissipation 230 W
very low on-state resistance. It is Tj Junction temperature 175