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Philips Semiconductors Product specification

TrenchMOS transistor BUK95180-100A
Logic level FET BUK96180-100A

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope available in VDS Drain-source voltage 100 V
TO220AB and SOT404 . Using ID Drain current (DC) 11 A
'trench' technology which features Ptot Total power dissipation 54 W
very low on-state resistance. It is Tj Junction temperature 175