gt50j301_en_wm_20061101.pdf part of Toshiba gt50j301 en wm 20061101 gt50j301_en_wm_20061101.pdf, . Electronic Components Datasheets Active components Transistors Toshiba gt50j301_en_wm

Text preview for : gt50j301_en_wm_20061101.pdf part of Toshiba gt50j301 en wm 20061101 . Electronic Components Datasheets Active components Transistors Toshiba gt50j301_en_wm_20061101.pdf

Back to : gt50j301_en_wm_20061101.p | Home

GT50J301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT50J301
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
MOTOR CONTROL APPLICATIONS

Third generation IGBT
Enhancement mode type
High speed : tf = 0.30s (Max.)
Low saturation voltage : VCE (sat) = 2.7V (Max.)
FRD included between emitter and collector

ABSOLUTE MAXIMUM RATINGS (Ta = 25