2n6802_irff430.pdf part of International Rectifier 2n6802 irff430 2n6802_irff430.pdf, . Electronic Components Datasheets Active components Transistors International Rectifier 2n6802

Text preview for : 2n6802_irff430.pdf part of International Rectifier 2n6802 irff430 . Electronic Components Datasheets Active components Transistors International Rectifier 2n6802_irff430.pdf

Back to : 2n6802_irff430.pdf | Home

PD -90433C

IRFF430
REPETITIVE A ALANCHE AND dv/dt RATED
V JANTX2N6802

HEXFET TRANSISTORS JANTXV2N6802
THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557
500V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRFF430 500V 1.5 2.5A

The HEXFET technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis- TO-39
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt- Features:
age control, very fast switching, ease of parelleling n Repetitive Avalanche Ratings
and temperature stability of the electrical parameters. n Dynamic dv/dt Rating
They are well suited for applications such as switch- n Hermetically Sealed
ing power supplies, motor controls, inverters, chop- n Simple Drive Requirements
pers, audio amplifiers and high energy pulse circuits. n Ease of Paralleling

Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25