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STP4NK50Z - STP4NK50ZFP
STD4NK50Z - STD4NK50Z-1
N-CHANNEL 500V - 2.4 - 3A TO-220/TO-220FP/DPAK/IPAK
Zener-Protected SuperMESHTMPower MOSFET
TYPE VDSS RDS(on) ID Pw
STP4NK50Z 500 V < 2.7 3 A 45 W
STP4NK50ZFP 500 V < 2.7 3 A 20 W
STD4NK50Z 500 V < 2.7 3 A 45 W
STD4NK50Z-1 500 V < 2.7 3 A 45 W
TYPICAL RDS(on) = 2.3
3
s 2
1
s EXTREMELY HIGH dv/dt CAPABILITY
TO-220 TO-220FP
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
3
s VERY GOOD MANUFACTURING 3 2
1
REPEATIBILITY 1
DPAK IPAK
DESCRIPTION
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established strip- INTERNAL SCHEMATIC DIAGRAM
based PowerMESHTM layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmeshTM products.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
s LIGHTING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP4NK50Z P4NK50Z TO-220 TUBE
STP4NK50ZFP P4NK50ZFP TO-220FP TUBE
STD4NK50ZT4 D4NK50Z DPAK TAPE & REEL
STD4NK50Z-1 D4NK50Z IPAK TUBE
December 2002 1/13
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STD4NK50Z
STP4NK50Z STP4NK50ZFP
STD4NK50Z-1
VDS Drain-source Voltage (VGS = 0) 500 V
VDGR Drain-gate Voltage (RGS = 20 k) 500 V
VGS Gate- source Voltage