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Preliminary Technical Information
Trench Gate IXTH200N075T VDSS = 75 V
Power MOSFET IXTQ200N075T ID25 = 200 A
RDS(on) 5.0 m
N-Channel Enhancement Mode
Avalanche Rated
Symbol Test Conditions Maximum Ratings TO-247 (IXTH)
V DSS TJ = 25