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PD - 90617
REPETITIVE A ALANCHE AND dv/dt RATED
V IRFAF30
HEXFET TRANSISTORS 900V, N-CHANNEL
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) ID
IRFAF30 900V 4.0 2.0
The HEXFET technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability. TO-3
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature Features:
stability of the electrical parameters. n Repetitive Avalanche Ratings
They are well suited for applications such as switching n Dynamic dv/dt Rating
power supplies, motor controls, inverters, choppers, audio n Hermetically Sealed
amplifiers and high energy pulse circuits. n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 0V, TC = 25