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2N/PN/SST4117A Series
Vishay Siliconix
N-Channel JFETs
2N4117A PN4117A SST4117
2N4118A PN4118A SST4118
2N4119A PN4119A SST4119
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
4117 -0.6 to -1.8 -40 70 30
4118 -1 to -3 -40 80 80
4119 -2 to -6 -40 100 200
FEATURES BENEFITS APPLICATIONS
D Ultra-Low Leakage: 0.2 pA D Insignificant Signal Loss/Error Voltage D High-Impedance Transducer
D Very Low Current/Voltage Operation with High-Impedance Source Amplifiers
D Ultrahigh Input Impedance D Low Power Consumption (Battery) D Smoke Detector Input
D Low Noise D Maximum Signal Output, Low Noise D Infrared Detector Amplifier
D High Sensitivity to Low-Level Signals D Precision Test Equipment
DESCRIPTION
The 2N/PN/SST4117A series of n-channel JFETs provide The hermetically sealed TO-206AF package allows full
ultra-high input impedance. These devices are specified with military processing per MIL-S-19500 (see Military
a 1-pA limit and typically operate at 0.2 pA. This makes them Information). The TO-226A (TO-92) plastic package provides
perfect choices for use as high-impedance sensitive front-end a low-cost option. The TO-236 (SOT-23) package provides
amplifiers. surface-mount capability. Both the PN and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
TO-206AF TO-226AA TO-236
(TO-72) (TO-92) (SOT-23)
S C D
1
1 4 D 1
S 2 3 G
S 2
2 3 G
3
D G
Top View Top View Top View
2N4117A PN4117A SST4117 (T7)*
2N4118A PN4118A SST4118 (T8)*
2N4119A PN4119A SST4119 (T9)*
*Marking Code for TO-236
For applications information see AN105.
Document Number: 70239 www.vishay.com
S-41231--Rev. G, 28-Jun-04 1
2N/PN/SST4117A Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40V Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Power Dissipation (case 25_C) :
(2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW
Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . . -65 to 175_C
(PN, SST Prefix)b . . . . . . . . . . . . . . . . 350 mW
(PN, SST Prefix) . . . . . . . . . . . . . -55 to 150_C
Operating Junction Temperature : Notes
(2N Prefix) . . . . . . . . . . . . . . . . . . . -55 to 175_C a. Derate 2 mW/_C above 25_C
(PN, SST Prefix) . . . . . . . . . . . . . -55 to 150_C b. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
4117 4118 4119
Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V(BR)GSS IG = -1 mA , VDS = 0 V -70 -40 -40 -40
V
Gate-Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 nA -0.6 -1.8 -1 -3 -2 -6
Saturation Drain Current IDSS VDS = 10 V, VGS = 0 V 30 90 80 240 200 600 mA
VGS = -20 V
-0.2 -1 -1 -1 pA
VDS = 0 V
VGS = -20 V 2N
VDS = 0 V -0.4 -2.5 -2.5 -2.5 nA
TA = 150_C
G t Reverse Current
Gate R C t IGSS PN -0.2 -1 -1 -1
VGS = -10 V
pA
VDS = 0 V SST -0.2 -10 -10 -10
VGS = -10 V
VDS = 0 V PN/SST -0.03 -2.5 -2.5 -2.5 nA
TA = 100_C
Gate Operating Currentb IG VDG = 15 V, ID = 30 mA -0.2
pA
Drain Cutoff Currentb ID(off) VDS = 10 V, VGS = -8 V 0.2
Gate-Source Forward Voltageb VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
gfs 70 210 80 250 100 330
Forward Transconductance VDS = 10 V, VGS = 0 V
mS
Common-Source f = 1 kHz
gos 3 5 10
Output Conductance
Common-Source 2N/PN 1.2 3 3 3
Ciiss
Input Capacitance VDS = 10 V SST 1.2
VGS = 0 V pF
Common-Source f = 1 MHz 2N/PN 0.3 1.5 1.5 1.5
Crss
Reverse Transfer Capacitance SST 0.3
VDS = 10 V, VGS = 0 V nV/
Equivalent Input Noise Voltageb en 15
f = 1 kHz Hz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NT
b. This parameter not registered with JEDEC.
www.vishay.com Document Number: 70239
2 S-41231--Rev. G, 28-Jun-04
2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage Gate Leakage Current
1000 300 1 nA
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V 100 mA
VGS(off) = -2.5 V
gfs - Forward Transconductance (