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BD707/709/711
BD708/710/712
COMPLEMENTARY SILICON POWER TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
APPLICATION
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BD707, BD709, and BD711 are silicon 3
epitaxial-base NPN power transistors in Jedec 2
1
TO-220 plastic package, intented for use in
power linear and switching applications.
The complementary PNP types are BD708, TO-220
BD710, and BD712 respectively.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
NPN BD707 BD709 BD711
PNP BD708 BD710 BD712
V CBO Collector-Base Voltage (IE = 0) 60 80 100 V
V CER Collector-Emitter Voltage (V BE = 0) 60 80 100 V
V CEO Collector-Emitter Voltage (I B = 0) 60 80 100 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 12 A
IB Base Current 5 A
o
P t ot Total Dissipation at T c 25 C 75 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
For PNP types voltage and current values are negative
September 1997 1/6
BD707/708/709/710/711/712
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 1.67 C/W
o
R t hj-ca se Thermal Resistance Junction-ambient Max 70 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CBO Collector Cut-off for BD707/708 V CB = 60 V 100