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PD - 93788
RADIATION HARDENED IRHF57230
POWER MOSFET 200V, N-CHANNEL
THRU-HOLE (TO-39) R5
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHF57230 100K Rads (Si) 0.22 7.3A
IRHF53230 300K Rads (Si) 0.22 7.3A
IRHF54230 600K Rads (Si) 0.22 7.3A
IRHF58230 1000K Rads (Si) 0.275 7.3A
TO-39
International Rectifier's R5TM technology provides Features:
high performance power MOSFETs for space appli- n Single Event Effect (SEE) Hardened
cations. These devices have been characterized for n Ultra Low RDS(on)
Single Event Effects (SEE) with useful performance n Neutron Tolerant
up to an LET of 80 (MeV/(mg/cm2)). The combination n Identical Pre- and Post-Electrical Test Conditions
of low RDS(on) and low gate charge reduces the power n Repetitive Avalanche Ratings
losses in switching applications such as DC to DC n Dynamic dv/dt Ratings
converters and motor control. These devices retain n Simple Drive Requirements
all of the well established advantages of MOSFETs n Ease of Paralleling
such as voltage control, fast switching, ease of paral- n Hermetically Sealed
leling and temperature stability of electrical param-
eters.
Absolute Maximum Ratings Pre-Irradiation
Parameter Units
ID @ VGS = 12V, TC = 25