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PD - 94176B

RADIATION HARDENED IRHF597110
POWER MOSFET 100V, P-CHANNEL
THRU-HOLE (TO-39) 4#
c
TECHNOLOGY

Product Summary
Part Number Radiation Level RDS(on) ID
IRHF597110 100K Rads (Si) 1.0 -2.6A
IRHF593110 300K Rads (Si) 1.0 -2.6A

TO-39
International Rectifier's R5TM technology provides Features:
high performance power MOSFETs for space appli- n Single Event Effect (SEE) Hardened
cations. These devices have been characterized for n Ultra Low RDS(on)
Single Event Effects (SEE) with useful performance
n Neutron Tolerant
up to an LET of 80 (MeV/(mg/cm2)). The combination
n Identical Pre- and Post-Electrical Test Conditions
of low RDS(on) and low gate charge reduces the power
n Repetitive Avalanche Ratings
losses in switching applications such as DC to DC n Dynamic dv/dt Ratings
converters and motor control. These devices retain
n Simple Drive Requirements
all of the well established advantages of MOSFETs
n Ease of Paralleling
such as voltage control, fast switching, ease of paral-
n Hermetically Sealed
leling and temperature stability of electrical param-
eters.
Absolute Maximum Ratings Pre-Irradiation
Parameter Units
ID @ VGS = -12V, TC = 25