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STD10NM60N, STF10NM60N
STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 8 A, DPAK, TO-220, TO-220FP, IPAK
,
MDmeshTM II Power MOSFET

Features
VDSS RDS(on)
Type ID Pw
@TJmax max.
3 3
STD10NM60N 70 W 2 2
1 1
STF10NM60N 25 W TO-220 TO-220FP
650 V < 0.55 8A
STP10NM60N
70 W
STU10NM60N
3
100% avalanche tested 2 3
1 1
Low input capacitance and gate charge
IPAK DPAK
Low gate input resistance

Application
Switching applications Figure 1. Internal schematic diagram

Description
These devices are N-channel 600 V Power
MOSFET realized using the second generation of
MDmeshTM technology. It applies the benefits of
the multiple drain process to STMicroelectronics'
well-known PowerMESHTM horizontal layout
structure. The resulting product offers improved
on-resistance, low gate charge, high dv/dt
capability and excellent avalanche characteristics.

Table 1. Device summary
Order code Marking Package Packaging

STD10NM60N 10NM60N DPAK Tape and reel
STF10NM60N 10NM60N TO-220FP Tube
STP10NM60N 10NM60N TO-220 Tube
STU10NM60N 10NM60N IPAK Tube

September 2010 Doc ID 15764 Rev 4 1/17
www.st.com 17
Contents STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 6

3 Test circuits .............................................. 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

2/17 Doc ID 15764 Rev 4
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings
Value
Symbol Parameter Unit
TO-220 TO-220FP IPAK DPAK

VGS Gate- source voltage