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STGB20NB32LZ
STGB20NB32LZ-1
N-CHANNEL CLAMPED 20A - D2PAK/I2PAK
INTERNALLY CLAMPED PowerMESHTM IGBT
TYPE VCES VCE(sat) IC
STGB20NB32LZ CLAMPED < 2.0 V 20 A
STGB20NB32LZ-1 CLAMPED < 2.0 V 20 A
s POLYSILICON GATE VOLTAGE DRIVEN
s LOW THRESHOLD VOLTAGE 3
1 3
s LOW ON-VOLTAGE DROP 12
s HIGH CURRENT CAPABILITY D 2PAK
s HIGH VOLTAGE CLAMPING FEATURE I2PAK
t( s)
uc
DESCRIPTION
Using the latest high voltage technology based on a
d
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESHTM IGBTs, with outstanding
ro
INTERNAL SCHEMATIC DIAGRAM
P
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
le te
so
gate-emitter zener supplies an ESD protection.
- Ob
(s)
APPLICATIONS
ct
s ELECTRONIC IGNITION FOR AUTOMOTIVE
o du
e Pr
o let
O bs
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STGB20NB32LZT4 GB20NB32LZ D2PAK TAPE & REEL
STGB20NB32LZ-1 GB20NB32LZ I2PAK TUBE
December 2003 1/11
STGB20NB32LZ - STGB20NB32LZ-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VGS = 0) CLAMPED V
VECR Reverse Battery Protection 20 V
VGE Gate-Emitter Voltage CLAMPED V
IC Collector Current (continuous) at Tc = 25