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AO4412
N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO4412 uses advanced trench technology to VDS (V) = 30V
provide excellent RDS(ON) and ultra low gate charge for ID = 8.5A (V GS = 10V)
use has a fast high side switch. The source leads are RDS(ON) < 26m (VGS = 10V)
separated to allow a Kelvin connection to the source, RDS(ON) < 34m (VGS = 4.5V)
which may be used to bypass the source
inductance.Standard product AO4412 is Pb-free
(meets ROHS & Sony 259 specifications). AO4412L
is a Green Product ordering option. AO4412 and
AO4412L are electrically identical.

D

S D
S D
S D
G D G
S
SOIC-8

Absolute Maximum Ratings TA=25