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FDS5670
August 1999

FDS5670
60V N-Channel PowerTrenchTM MOSFET

General Description Features
This N-Channel MOSFET has been designed specifically 10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V
to improve the overall efficiency of DC/DC converters using
RDS(ON) = 0.017 @ VGS = 6 V.
either synchronous or conventional switching PWM
controllers.
Low gate charge.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R DS(ON) Fast switching speed.
specifications.
High performance trench technology for extremely
The result is a MOSFET that is easy and safer to drive low RDS(ON).
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency. High power and current handling capability.

D
D 5 4
D
D 6 3

7 2
G
S 1
S 8
SO-8 S
Absolute Maximum Ratings TA = 25