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DISCRETE POWER & SIGNAL
TECHNOLOGIES
2N6076
SILICON PNP SMALL SIGNAL TRANSISTOR 0.135 - 0.145
1 2 3
BVCEO . . . . 25 V (Min) (3.429 - 3.683)
1 2 3
hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E
0.175 - 0.185
(4.450 - 4.700)
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
TEMPERATURES LOGOXYY
Storage Temperature -55 Degrees C to 150 Degrees C 0.175 - 0.185
2N (4.450 - 4.700)
Operating Junction Temperature 150 Degrees C
6076
SEATING
POWER DISSIPATION (NOTES 2 & 3)
PLANE
Total Device Dissipation at TA = 25 Deg C 625 mW
0.500
VOLTAGES & CURRENT MIN
(12.70)
VCEO Collector to Emitter 25 V
VCBO Collector to Base 25 V
VEBO Emitter to Base 5V 0.016 - 0.021
IC Collector Current 500 mA (0.410- 0.533)
0.045 - 0.055
(1.143- 1.397)
0.095 - 0.105
(2.413 - 2.667)
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
BVCBO Collector to Base Voltage 25 V IC = 100 uA
BVCEO Collector to Emitter Voltage 25 V IC = 10 mA
BVEBO Emitter to Base Voltage 5 V IE = 10 uA
ICBO Collector Cutoff Current 100 nA VCB = 25 V
10 uA VCB = 25 V , T=+100