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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
PF08103B
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
ADE-208-785E (Z) Rev.5 Dec. 2001 Application
· Dual band amplifier for E-GSM900 (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz). · For 3.5 V nominal battery use
Features
· 1 in / 2 out dual band amplifier · Simple external circuit including output matching circuit · Simple power control · High gain 3stage amplifier : +1 dBm input for GSM, +4.5 dBm input for DCS · Lead less thin & Small package : 11 × 13.75 × 1.8 mm · High efficiency : 45 % Typ at 35.0 dBm for E-GSM 35 % Typ at 32.5 dBm for DCS1800
Pin Arrangement
· RF-O
7 G 6 5 G 4
8
G 1
2
G
3
1: VCTL 2: VCTL 3: Vdd2 4: Pout GSM 5: Pout DCS 6: Vdd1 7: Vapc 8: Pin G: GND
PF08103B
Absolute Maximum Ratings
(Tc = 25°C)
Item Supply voltage Supply current VCTL , VCTL voltage Vapc voltage Input power Operating case temperature Storage temperature Output power Symbol VDD IDD GSM IDD DCS VCTL, VCTL Vapc Pin Tc (op) Tstg Pout GSM Pout DCS Rating 8.0 3.5 2 4 4 10 -30 to +100 -30 to +100 5 3 Unit V A A V V dBm °C °C W W
Note: The maximum ratings shall be valid over both the E-GSM-band (880 MHz - 915 MHz), and the DCSband (1710 MHz - 1785 MHz).
Electrical Characteristics for DC
(Tc = 25°C)
Item Drain cutoff current Symbol Ids Min Typ Max 20 300 Unit µA µA Test Condition VDD = 4.7 V, Vapc = 0 V, VCTL = 0 V, VCTL = 0 V VDD = 4.7 V, Vapc = 0 V, VCTL = 0 V, VCTL = 0 V, Tc = -20 to +80°C Vapc = 2.2 V VCTL = 3 V VCTL = 3 V
Vapc control current VCTL control current VCTL control current
Iapc ICTL ICTL
3 2 1
mA µA µA
Rev.5, Dec. 2001, page 2 of 16
PF08103B
Electrical Characteristics for GSM900 mode
(Tc = 25°C)
Test conditions unless otherwise noted:
f = 880 to 915MHz, VDD1 = V DD2 = 3.5V, Pin = +1dBm, VCTL = 2.0V, VCTL = 0.1V, Rg = Rl = 50, Tc = 25°C, Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.
Item Frequency range Control voltage range Total efficiency 2nd harmonic distortion 3rd harmonic distortion 4th~8th harmonic distortion Input VSWR Output power (1) Output power (2) Isolation Isolation at DCS RF-output when GSM is active Switching time Stability Symbol f Vapc T 2nd H.D. 3rd H.D. 4th~8th H.D. VSWR (in) Pout (1) Pout (2) Min 880 0.2 40 35.0 33.5 Typ 45 -45 -45 1.5 36.0 34.2 -45 -30 Max 915 2.2 -35 -35 -35 3.5 -37 -20 Unit MHz V % dBc dBc dBc dBm dBm dBm dBm Vapc = 2.2V VDD = 3.0V, Vapc = 2.2V, Tc = +85°C Vapc = 0.2 V Pout GSM = 35dBm (GSM mode) Measured at f = 1760 to 1830MHz, Pin(GSM) = +1dBm Pout GSM = 0 to 35.0dBm VDD = 3 to 5.1V, Pout 35.0dBm, Vapc GSM 2.2V GSM pulse. Rg = 50, Tc = 25°C, Output VSWR = 6 : 1 All phases VDD = 3 to 5.1V, Pout GSM 35.0dBm, Vapc GSM 2.2V GSM pulse. Rg = 50, t = 20sec., Tc = 25°C, Output VSWR = 10 : 1 All phases f0 = 915MHz, frx = f0 +10MHz Pout GSM = 35dBm, RES BW = 100kHz f0 = 915MHz, frx = f0 +20MHz Pout GSM = 35dBm, RES BW = 100kHz Pout GSM = 0 to 35dBm Pout GSM = 34 to 35dBm f0 = 915MHz, (Pin = +1dBm) Other sig. = 895MHz (Pin = -40dBc) Pout GSM = 33.5dBm f0 = 915MHz, (Pin = +1dBm) Other sig. = 905MHz (Pin = -40dBc) Pout GSM = 33.5dBm Pout GSM = +5dBm, 4%AM modulation at input 50kHz modulation frequency Pout GSM = 35dBm, Vapc = controlled Test Condition
t r, t f
1
2
µs
No parasitic oscillation All spuriouses < -36 dBm (Res BW = 3 MHz) No degradation or Permanent degradation -80 -84 200 20 -5
Load VSWR tolerance
Noise power
Pnoise1 Pnoise2
dBm dBm dB/V deg/ dB dB
Slope Pout/Vapc Phase shift Total conversion gain1
Total conversion gain2
-5
dB
AM output
20
%
Rev.5, Dec. 2001, page 3 of 16
PF08103B
Electrical Characteristics for DCS1800 mode
(Tc = 25°C)
Test conditions unless otherwise noted:
f = 1710 to 1785MHz, V DD1 = V DD2 = 3.5V, Pin = +4.5dBm, VCTL = 0.1V, VCTL = 2.0V, Rg = Rl = 50, Tc = 25°C, Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.
Item Frequency range Control voltage range Total efficiency 2nd harmonic distortion 3rd harmonic distortion 4th~8th harmonic distortion Input VSWR Output power (1) Output power (2) Isolation Switching time Stability Symbol f Vapc T 2nd H.D. 3rd H.D. 4th~8th H.D. VSWR (in) Pout (1) Pout (2) t r, t f Min 1710 0.2 30 32.5 30.8 Typ 35 -45 -45 3 33 31.3 -42 1 Max 1785 2.2 -35 -35 35 4 -37 2 Unit MHz V % dBc dBc dBc dBm dBm dBm µs Vapc = 2.2V VDD = 3.1V, Vapc = 2.2V, Tc = +85°C Vapc = 0.2V Pout DCS = 0 to 32.5dBm VDD = 3.1 to 5.1V, Pout DCS 32.5dBm, Vapc 2.2V DCS pulse. Rg = 50, Tc = 25°C, Output VSWR = 6 : 1 All phases VDD = 3.1 to 5.1V, Pout DCS 32.5dBm, Vapc 2.2V DCS pulse. Rg = 50, t = 20sec., Tc = 25°C, Output VSWR = 10 : 1 All phases f0 = 1785MHz, frx = f0 +20MHz, Pout DCS = 32.5dBm, RES BW = 100kHz Pout DCS = 0 to 32dBm Pout DCS = 31 to 32dBm f0 = 1785MHz, (Pin = +4.5dBm) Other sig. = 1765 MHz (-40dBc) Pout DCS = 31dBm Pout DCS = 0dBm, 4%AM modulation at input 50kHz modulation frequency Pout DCS = 32.5dBm, Vapc = controlled Test Condition
No parasitic oscillation All spuriouses < -36 dBm (Res BW = 3 MHz) No degradation or Permanent degradation -77 200 20 -5
Load VSWR tolerance
Noise power Slope Pout/Vapc Phase shift Total conversion gain
Pnoise
dBm dB/V deg/ dB dB
AM output
20
%
Rev.5, Dec. 2001, page 4 of 16
PF08103B
Internal Circuit Block Diagram
Vdd1 Vdd2
Pout GSM Pin Pout DCS
Bias circuit
VCTL
VCTL
Vapc
Band Select and Power Control
Operating Mode GSM Tx ON DCS Tx ON Tx OFF VCTL H L L VCTL L H L Vapc Control Control < 0.2 V
Current of Control Pin
Control Pin VCTL Equivalent Input Circuit Control Current 2 µA Max
VCTL
1 µA Max
Vapc
3 mA Max at 2.2 V
Note: Control current is preliminary value.
Rev.5, Dec. 2001, page 5 of 16
PF08103B
Characteristic Curves
GSM mode (880MHz) Pout, Efficiency vs Vapc 40 30 20 10
Pout (dBm)
VDD = 3.5 V, Pin = 1 dBm, Vapc = control, VCTL = 2.0 V, VCTL = 0.1 V, Tc = 25°C, Rg = Rl = 50
60 55 Pout 50 Eff 40 35 30 25 20 15 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Vapc (V) 2 10 2.2
Total Efficiency (%) Total Efficiency (%)
45
0 -10 -20 -30 -40 -50 -60
DCS mode (1710MHz) Pout, Efficiency vs Vapc 40 30 20 10
Pout (dBm)
VDD = 3.5 V, Pin = 4.5 dBm, Vapc = control, VCTL = 0.1 V, VCTL = 2.0 V, Tc = 25°C, Rg = Rl = 50
50 45 40 Pout 35 Eff 30 25 20 15 10 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Vapc (V) 2 0 2.2
0 -10 -20 -30 -40 -50 -60
Rev.5, Dec. 2001, page 6 of 16
PF08103B
GSM mode (915MHz) Pout, Efficiency vs Vapc 40 30 20 10
Pout (dBm)
VDD = 3.5 V, Pin = 1 dBm, Vapc = control, VCTL = 2.0 V, VCTL = 0.1 V, Tc = 25°C, Rg = Rl = 50
60 55 Pout 50 Eff 40 35 30 25 20 15 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Vapc (V) 2 10 2.2
Total Efficiency (%) Total Efficiency (%)
45
0 -10 -20 -30 -40 -50 -60
DCS mode (1785MHz) Pout, Efficiency vs Vapc 40 30 20 10
Pout (dBm)
VDD = 3.5 V, Pin = 4.5 dBm, Vapc = control, VCTL = 0.1 V, VCTL = 2.0 V, Tc = 25°C, Rg = Rl = 50
50 45 Pout 40 35 Eff 30 25 20 15 10 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Vapc (V) 2 0 2.2
0 -10 -20 -30 -40 -50 -60
Rev.5, Dec. 2001, page 7 of 16
PF08103B
GSM mode Effciency vs Pout(1) 60
VDD = 3.5 V, Pin = 1 dBm, Vapc = control, VCTL = 2.0 V, VCTL = 0.1 V, Tc = 25°C, Rg = Rl = 50
50
Total Efficiency (%)
f = 915 MHz f = 880 MHz
40
30
20
10
0 20
25
30 Pout(1) (dBm)
35
40
DCS mode Effciency vs Pout(1) 50
VDD = 3.5 V, Pin = 4.5 dBm, Vapc = control, VCTL = 0.1 V, VCTL = 2.0 V, Tc = 25°C, Rg = Rl = 50
40
Total Efficiency (%)
f = 1785 MHz
30 f = 1710 MHz 20
10
0 22
24
26
28 30 Pout(1) (dBm)
32
34
36
Rev.5, Dec. 2001, page 8 of 16
PF08103B
GSM mode (880MHz) Pout vs Pin 37
36
Pout (dBm)
35
34
33
Vapc = 2.2 V, VCTL = 2.0 V, VCTL = 0.1 V, Rg = Rl = 50
3.0V, 25°C 3.5V, 25°C 3.0V, 85°C 3.5V, 85°C
Pout(1) Pout(2)
32 -6
-4
-2
0
2 4 Pin (dBm)
6
8
10
DCS mode (1710MHz) Pout vs Pin 36
Vapc = 2.2 V, VCTL = 0.1 V, VCTL = 2.0 V, Rg = Rl = 50
34
Pout (dBm)
32
30
28
3.1V, 25°C 3.5V, 25°C 3.1V, 85°C 3.5V, 85°C
Pout(1) Pout(2)
26 -6
-4
-2
0
2 4 Pin (dBm)
6
8
10
Rev.5, Dec. 2001, page 9 of 16
PF08103B
GSM mode (915MHz) Pout vs Pin 37
36
Pout (dBm)
35
34
33
Vapc = 2.2 V, VCTL = 2.0 V, VCTL = 0.1 V, Rg = Rl = 50
3.0V, 25°C 3.5V, 25°C 3.0V, 85°C 3.5V, 85°C
Pout(1) Pout(2)
32 -6
-4
-2
0
2 4 Pin (dBm)
6
8
10
DCS mode (1785MHz) Pout vs Pin 36
Vapc = 2.2 V, VCTL = 0.1 V, VCTL = 2.0 V, Rg = Rl = 50
34
Pout (dBm)
32
30
28
3.1V, 25°C 3.5V, 25°C 3.1V, 85°C 3.5V, 85°C
Pout(1) Pout(2)
26 -6
-4
-2
0
2 4 Pin (dBm)
6
8
10
Rev.5, Dec. 2001, page 10 of 16
PF08103B
GSM Mode Efficiency vs Pin 55
50 f = 915 MHz
Total Efficiency (%)
45 f = 880 MHz 40
VDD = 3.5 V, Vapc = control, Pout = 35 dBm, VCTL = 2.0 V, VCTL = 0.1 V, Tc = 25°C, Rg = Rl = 50
35
30
25 -10
-5
0 Pin (dBm)
5
10
DCS Mode Efficiency vs Pin 45
VDD = 3.5 V, Vapc = control, Pout = 32.5 dBm, VCTL = 0.1 V, VCTL = 2.0 V, Tc = 25°C, Rg = Rl = 50
f = 1785 MHz
40
Total Efficiency (%)
35 f = 1710 MHz
30
25 -10
-5
0 Pin (dBm)
5
10
Rev.5, Dec. 2001, page 11 of 16
PF08103B
GSM Mode Pout(1) vs Vdd 40
39 f = 880 MHz 38
Pout(1) (dBm)
f = 915 MHz 37
36
35
Pin = 1 dBm, Vapc = 2.2 V, VCTL = 2.0 V, VCTL = 0.1 V, Tc = 25°C, Rg = Rl = 50
34
3
3.5
4
4.5 Vdd (V)
5
5.5
DCS Mode Pout(1) vs Vdd 37
36 f = 1710 MHz 35 f = 1785 MHz 34
Pout(1) (dBm)
33
32
Pin = 4.5 dBm, Vapc = 2.2 V, VCTL = 0.1 V, VCTL = 2.0 V, Tc = 25°C, Rg = Rl = 50
31
3
3.5
4
4.5 Vdd (V)
5
5.5
Rev.5, Dec. 2001, page 12 of 16
PF08103B
GSM Mode Pout(1) vs Frequency 37 36.5 36
Pout (dBm)
35.5 35 GSM 34.5 34 33.5
VDD = 3.5 V, Pin = 1 dBm, Vapc = 2.2 V, VCTL = 2.0 V, VCTL = 0.1 V, Tc = 25°C, Rg = Rl = 50
33 800
850
900 950 Frequency (MHz)
1000
DCS Mode Pout(1) vs Frequency 34
33.5
33
Pout (dBm)
32.5
VDD = 3.5 V, Pin = 4.5 dBm, Vapc = 2.2 V, VCTL = 0.1 V, VCTL = 2.0 V, Tc = 25°C, Rg = Rl = 50
32
DCS1800
31.5
31 1600
1650
1700 1750 1800 Frequency (MHz)
1850
1900
Rev.5, Dec. 2001, page 13 of 16
PF08103B
GSM Mode Efficiency vs Frequency 55
VDD = 3.5 V, Pin = 1 dBm, Vapc = control, Pout = 35 dBm, VCTL = 2.0 V, VCTL = 0.1 V, Tc = 25°C, Rg = Rl = 50
50
Total Efficiency (%)
45
GSM 40
35
30 800
850
900 950 Frequency (MHz)
1000
DCS Mode Efficiency vs Frequency 45
VDD = 3.5 V, Pin = 4.5 dBm, Vapc = control, Pout = 32.5 dBm, VCTL = 0.1 V, VCTL = 2.0 V, Tc = 25°C, Rg = Rl = 50
40
Total Efficiency (%)
35
30
DCS1800
25
20 1600
1650
1700 1750 1800 Frequency (MHz)
1850
1900
Rev.5, Dec. 2001, page 14 of 16
PF08103B
Package Dimensions
1.8 ± 0.2 8 7 G 6 5
Unit: mm
11.0 ± 0.3
G
G
1
2
3 G (Upper side)
4 G 6 5 G 4
13.75 ± 0.3 13.75 ± 0.3 (5.40) (5.40) (3.30) (3.30) (1.60)(1.60) (3.40) (1.60)(1.60)
11.0 ± 0.3
8 7
(10.8)
G 1
2
G
3
(1.40)(1.40)(1.40)
(2.40)(2.40)
(1.40)
11.0 ± 0.3
1: VCTL 2: VCTL 3: Vdd2 4: Pout GSM 5: Pout DCS 6: Vdd1 7: Vapc 8: Pin G: GND
(3.40)
(3.7) (2.50) (3.7) (2.50)
(1.40) (1.40)
(1.40)
Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm.
Hitachi Code JEDEC JEITA Mass (reference value) RF-O
(Bottom side)
Rev.5, Dec. 2001, page 15 of 16
PF08103B
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
http://www.renesas.com
Copyright © 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan.
Colophon 0.0
Rev.5, Dec. 2001, page 16 of 16