Text preview for : pf08122b.pdf part of Hitachi pf08122b Dualband GSM Amplifier
Back to : pf08122b.pdf | Home
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
PF08122B
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone
ADE-208-1400H (Z) Rev.8 Jul. 2002 Application
· Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz). · For 3.5 V & GPRS Class12 operation compatible
Features
· All in one including output matching circuit · Simple external circuit · Simple power control · High gain 3stage amplifier : 0 dBm input Typ · Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ · High efficiency : 55% Typ at 35.0 dBm for E-GSM 50% Typ at 32.5 dBm for DCS1800 · Lower consume current at low power 100 mA Typ at 7 dBm for E-GSM 60 mA Typ at 5 dBm for DCS1800
Pin Arrangement
· RF-K-8A
5 G6 8 7 G 12
G 4 G 3
1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8: Pin DCS G: GND
PF08122B
Absolute Maximum Ratings
(Tc = 25°C)
Item Supply voltage Symbol Vdd Rating 7.0 5.0 Supply current Idd GSM Idd DCS Vctl voltage Vapc voltage Input power Operating case temperature Storage temperature Output power Vctl Vapc Pin Tc (op) Tstg Pout GSM Pout DCS 3.5 2 4 4 10 -25 to +90 -30 to +100 5 3 Unit V V A A V V dBm °C °C W W Remark at no-operation at operation (50 load)
Note: The maximum ratings shall be valid over both the E-GSM-band (880 to 915 MHz), and the DCS1800-band (1710 to 1785 MHz).
Electrical Characteristics for DC
(Tc = 25°C)
Item Drain cutoff current Vapc control current Vctl control current Symbol Ids Iapc Ictl Min Typ Max 20 2.0 2 Unit µA mA µA Test Condition Vdd = 4.7 V, Vapc = 0 V, Vctl = 0.2 V Vapc = 2.2 V Vctl = 3 V
Rev.8, Jul. 2002, page 2 of 11
PF08122B
Electrical Characteristics for GSM900 band
(Tc = 25°C) Test conditions unless otherwise noted: f = 880 to 915 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 2.0 V, Rg = Rl = 50 , Tc = 25°C, Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used.
Item Frequency range Band select (GSM active) Input power Control voltage range Supply voltage Total efficiency 2nd harmonic distortion 3rd harmonic distortion 4th~8th harmonic distortion Input VSWR Output power (1) Output power (2) Idd at Low power Isolation Isolation at DCS RF-output when GSM is active Switching time Stability Symbol f Vctl Pin Vapc Vdd T 2nd H.D. 3rd H.D. 4th~8th H.D. VSWR (in) Pout (1) Pout (2) Min 880 2.0 2 0.2 3.0 47 35.0 33.5 Typ 0 3.5 55 -45 -45 1.5 36.0 34.5 100 -50 -25 Max 915 2.8 2 2.2 4.5 -35 -35 -35 3 300 -37 -18 Unit MHz V dBm V V % dBc dBc dBc dBm dBm mA dBm dBm Vapc = 2.2 V Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C Pout GSM = 7 dBm Vapc = 0.2 V Pout GSM = 35 dBm, Measured at f = 1760 to 1830 MHz Pout GSM = 5 to 35 dBm Vdd = 3.1 to 4.5 V, Pout 35 dBm, Vapc GSM 2.2 V, Rg = 50 , Tc = 25°C, Output VSWR = 6 : 1 All phases Vdd = 3.1 to 4.5 V, Pout GSM 35 dBm, Vapc GSM 2.2 V, Rg = 50 , t = 20 sec., Tc = 25°C, Output VSWR = 10 : 1 All phases Vdd = 3.1 to 4.2 V, Pout GSM 35 dBm, Vapc GSM 2.2 V, Rg = 50 , t = 20 sec., Tc 90°C, Output VSWR = 10 : 1 All phases Pout GSM = 5 to 35 dBm Pout GSM = 5 to 35 dBm, 4% AM modulation at input 50 kHz modulation frequency Pout GSM = 35 dBm, Vapc = controlled Test Condition
t r, t f
1
2
µs
No parasitic oscillation
Load VSWR tolerance
No degradation
Load VSWR tolerance at GPRS CLASS 12 operation Slope Pout/Vapc AM output
No degradation
160 15
200 30
dB/V %
Rev.8, Jul. 2002, page 3 of 11
PF08122B
Electrical Characteristics for DCS1800 band
(Tc = 25°C)
Test conditions unless otherwise noted:
f = 1710 to 1785 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0.2 V, Rg = Rl = 50 , Tc = 25°C, Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used.
Item Frequency range Band select (DCS active) Input power Control voltage range Supply voltage Total efficiency 2nd harmonic distortion 3rd harmonic distortion 4th~8th harmonic distortion Input VSWR Output power (1) Output power (2) Idd at Low power Isolation Switching time Stability Symbol f Vctl Pin Vapc Vdd T 2nd H.D. 3rd H.D. 4th~8th H.D. VSWR (in) Pout (1) Pout (2) t r, t f Min 1710 0 2 0.2 3.0 43 32.5 31.0 Typ 0 3.5 50 -45 -45 1.5 33.5 32.0 60 -47 1 Max 1785 0.2 2 2.2 4.5 -35 -35 35 3 150 -37 2 Unit MHz V dBm V V % dBc dBc dBc dBm dBm mA dBm µs Vapc = 2.2 V Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C, Pout DCS = 5 dBm Vapc = 0.2 V Pout DCS = 0 to 32.5 dBm Vdd = 3.1 to 4.5 V, Pout DCS 32.5 dBm, Vapc 2.2 V, Rg = 50 , Output VSWR = 6 : 1 All phases Vdd = 3.1 to 4.5 V, Pout DCS 32.5 dBm, Vapc 2.2 V, Rg = 50 , t = 20 sec., Tc = 25°C, Output VSWR = 10 : 1 All phases Vdd = 3.1 to 4.2 V, Pout DCS 32.5 dBm, Vapc 2.2 V, Rg = 50 , t = 20 sec., Tc 90°C, Output VSWR = 10 : 1 All phases Pout DCS = 0 to 32.5 dBm Pout DCS = 0 to 32.5 dBm, 4% AM modulation at input 50 kHz modulation frequency Pout DCS = 32.5 dBm, Vapc = controlled Test Condition
No parasitic oscillation
Load VSWR tolerance
No degradation
Load VSWR tolerance at GPRS CLASS 12 operation Slope Pout/Vapc AM output
No degradation
160 15
200 30
dB/V %
Rev.8, Jul. 2002, page 4 of 11
PF08122B
Circuit Diagram
PIN7 Vctl PIN6 Vdd2
PIN8 Pin DCS
PIN5 Pout DCS
PIN1 Pin GSM
PIN4 Pout GSM
Bias circuit PIN2 Vapc PIN3 Vdd1
Rev.8, Jul. 2002, page 5 of 11
PF08122B
Characteristic Curves
GSM mode (880MHz to 915 MHz)
GSM mode (880 MHz) Pout, Eff vs. Vapc 40 100 30 Pin = 0 dBm 90 20 Vdd = 3.5 V 80 10 Vapc = control 70 Eff 60 0 Tc = 25°C Pout 50 10 40 20 30 30 20 40 10 50 60 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) GSM mode (915 MHz) Pout, Eff vs. Vapc 40 100 30 Pin = 0 dBm 90 20 Vdd = 3.5 V 80 10 Vapc = control 70 Eff 60 0 Tc = 25°C Pout 50 10 40 20 30 30 20 40 10 50 60 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V)
Pout (dBm)
Pout (dBm)
Eff (%)
GSM mode (880 MHz) Eff vs. Pout 60 Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 20 10 0 0 5 10 15 20 25 Pout (dBm) 30 35 40 60
GSM mode (915 MHz) Eff vs. Pout Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 20 10 0 0 5 10 15 20 25 Pout (dBm) 30 35 40
Eff (%)
GSM mode (880 MHz) Pout, Eff vs. Pin 38.0 Vdd = 3.5 V 37.5 Tc = 25°C
Pout (dBm)
Eff (%)
GSM mode (915 MHz) Pout, Eff vs. Pin 55 37.0 Vdd = 3.5 V 36.5 Tc = 25°C
Pout (dBm) Eff (%)
60 Eff 57 54 Pout 51 Pout:Vapc = 2.2 V Eff:Pout = 35 dBm 6 48 45 8 10
Eff (%)
Eff
53 51
37.0 36.5 36.0 Pout Pout:Vapc = 2.2 V Eff:Pout = 35 dBm 6
36.0 35.5 35.0
49 47 45 8 10
35.5 10 8 6 4 2 0 2 4 Pin (dBm)
34.5 10 8 6 4 2 0 2 4 Pin (dBm)
Rev.8, Jul. 2002, page 6 of 11
Eff (%)
PF08122B
GSM mode (880MHz to 915 MHz) (cont)
GSM mode (880 MHz) Idd vs. Pout 10 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C 10 GSM mode (915 MHz) Idd vs. Pout Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C
Idd (A)
0.1
Idd (A)
20 30 40
0.1
0.01 50 40 30 20 10 0 10 Pout (dBm)
0.01 50 40 30 20 10 0 10 Pout (dBm)
20
30
40
GSM mode Pout, Eff vs. Freq 38 60 Pout Eff 39.0 37 36 35 34 Vdd = 3.5 V Tc = 25°C Pout:Vapc = 2.2 V Eff:Pout = 35 dBm 55 38.0 37.0 36.0 35.0 34.0 3 3.2
GSM mode Pout vs. Vdd
Pout (dBm)
Pout (dBm)
50 45 40
Eff (%)
880 MHz 915 MHz Vdd = 3.5 V Tc = 25°C Pout:Vapc = 2.2 V Eff:Pout = 35 dBm 3.4 3.6 3.8 Vdd (V) 4 4.2 4.4
33 35 800 820 840 860 880 900 920 940 960 Freq (MHz)
GSM mode (880 MHz) Pout vs. Pin (Temperature variation) 37.0 Vapc = 2.2 V Vdd = 3.5 V, Tc = 25°C
GSM mode (915 MHz) Pout vs. Pin (Temperature variation) 37.0 Vapc = 2.2 V
Pout (dBm)
Pout (dBm)
36.0 35.0 34.0 33.0 8
Vdd = 3.5 V, Tc = 85°C Vdd = 3.1 V, Tc = 85°C
36.0 35.0 34.0 33.0 8
Vdd = 3.5 V, Tc = 25°C Vdd = 3.5 V, Tc = 85°C Vdd = 3.1 V, Tc = 85°C
6
4
2 0 2 Pin (dBm)
4
6
8
6
4
2 0 2 Pin (dBm)
4
6
8
Rev.8, Jul. 2002, page 7 of 11
PF08122B
DCS mode (1710MHz to 1785 MHz)
DCS mode (1710 MHz) Pout, Eff vs. Vapc 40 30 20 10 0 10 20 30 40 50 60 100 Pin = 0 dBm 90 Vdd = 3.5 V 80 Vapc = control 70 Tc = 25°C 60 Pout Eff 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) 40 30 20 10 0 10 20 30 40 50 60 DCS mode (1785 MHz) Pout, Eff vs. Vapc 100 90 80 70 60 Pout Eff 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Vapc (V) Pin = 0 dBm Vdd = 3.5 V Vapc = control Tc = 25°C
Pout (dBm)
Pout (dBm)
Eff (%)
DCS mode (1710 MHz) Eff vs. Pout 60 Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 20 10 0 0 5 10 15 20 Pout (dBm) 25 30 35 60
DCS mode (1785 MHz) Eff vs. Pout Pin = 0 dBm 50 Vdd = 3.5 V Vapc = control 40 Tc = 25°C 30 20 10 0 0 5 10 15 20 Pout (dBm) 25 30 35
Eff (%)
DCS mode (1710 MHz) Pout, Eff vs. Pin 34.0
Pout (dBm)
Eff (%)
DCS mode (1785 MHz) Pout, Eff vs. Pin 55
Pout (dBm)
33.5 33.0 32.5 32.0 Pout Eff
55 52 49
Eff (%)
33.5 33.0
Pout Eff
Eff (%)
50
Vdd = 3.5 V 45 Tc = 25°C Pout:Vapc = 2.2 V Eff:Pout = 32.5 dBm 40 32.0 10 8 6 4 2 0 2 4 6 8 10 Pin (dBm) 32.5
46 Vdd = 3.5 V Tc = 25°C 31.5 43 Pout:Vapc = 2.2 V Eff:Pout = 32.5 dBm 31.0 40 10 8 6 4 2 0 2 4 6 8 10 Pin (dBm)
Rev.8, Jul. 2002, page 8 of 11
Eff (%)
PF08122B
DCS mode (1710MHz to 1785 MHz) (cont)
DCS mode (1710 MHz) Idd vs. Pout 10 Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C 10 DCS mode (1785 MHz) Idd vs. Pout Pin = 0 dBm Vdd = 3.5 V Vapc = control 1 Tc = 25°C
Idd (A)
0.1
Idd (A)
20 30 40
0.1
0.01 50 40 30 20 10 0 10 Pout (dBm)
0.01 50 40 30 20 10 0 10 Pout (dBm)
20
30
40
DCS mode Pout, Eff vs. Freq 35 60 36.0 34 33 Eff 32 31 Vdd = 3.5 V Tc = 25°C Pout:Vapc = 2.2 V Eff:Pout = 32.5 dBm 45 40 55
DCS mode Pout vs. Vdd Pin = 0 dBm 35.0 Vapc = 2.2 V Tc = 25°C 34.0 33.0 32.0 31.0 3 3.2 3.4 3.6 3.8 Vdd (V) 4 4.2 4.4 1710 MHz 1785 MHz
Pout (dBm)
50
30 35 1600 1650 1700 1750 1800 1850 1900 Freq (MHz)
Pout (dBm)
33.0 32.0 31.0 30.0 8 6 4
Vdd = 3.5 V, Tc = 85°C Vdd = 3.1 V, Tc = 85°C
Pout (dBm)
DCS mode (1710 MHz) Pout vs. Pin (Temperature variation) 35.0 Vapc = 2.2 V 34.0 Vdd = 3.5 V, Tc = 25°C
Pout (dBm)
Pout
Eff (%)
DCS mode (1785 MHz) Pout vs. Pin (Temperature variation) 35.0 Vapc = 2.2 V 34.0 Vdd = 3.5 V, Tc = 25°C 33.0 32.0 31.0 Vdd = 3.5 V, Tc = 85°C Vdd = 3.1 V, Tc = 85°C
2 0 2 Pin (dBm)
4
6
8
30.0 8
6
4
2 0 2 Pin (dBm)
4
6
8
Rev.8, Jul. 2002, page 9 of 11
PF08122B
Package Dimensions
Unit: mm
1.6 ± 0.2 8
8.0 ± 0.3
7
G
6
5
8.0 ± 0.3
G
G
1
2
G 3 (Upper side)
4 5 G6 8 7 G 12 G 4 G 3
13.75 ± 0.3
(5.375) (5.375)
(3.275) (3.275) (1.6) (1.6)
(1.1) (0.3)
(3.7) (1.3)
(1.6) (1.6)
(3.7)
(1.4) (2.4)
(0.3) (1.1)
(3.7)
(2.4)
(2.2)
(0.7)
(1.5) (1.5)
1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8: Pin DCS G: GND
(3.7)
(3.7)
(Bottom side)
Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm.
Hitachi Code JEDEC JEITA Mass (reference value) RF-K-8A
Rev.8, Jul. 2002, page 10 of 11
PF08122B
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
http://www.renesas.com
Copyright © 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan.
Colophon 0.0
Rev.8, Jul. 2002, page 11 of 11