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CEP80N15/CEB80N15
CEF80N15
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY

FEATURES
Type VDSS RDS(ON) ID @VGS
CEP80N15 150V 19m 76A 10V
CEB80N15 150V 19m 76A 10V
CEF80N15 150V 19m 76A d 10V

Super high dense cell design for extremely low RDS(ON).
D
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 & TO-220F full-pak for through hole.

D G

G G
G D D
S S S S
CEB SERIES CEP SERIES CEF SERIES
TO-263(DD-PAK) TO-220 TO-220F

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Limit
Parameter Symbol Units
TO-220/263 TO-220F
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS