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PD -94307


IRG4CF50WB
IRG4CF50WB IGBT Die in Wafer Form


C
900 V
Size 5
Warp Speed
G 6" Wafer
E


Electrical Characteristics ( Wafer Form )
Parameter Description Guaranteed (Min/Max) Test Conditions
VCE (on) Collector-to-Emitter Saturation Voltage 3.11V Max. IC = 10A, TJ = 25