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April 1998

FDP7030L / FDB7030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features

These N-Channel logic level enhancement mode power field 100 A, 30 V. RDS(ON) = 0.007 @ VGS=10 V
effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.010 @ VGS=5 V.
high cell density, DMOS technology. This very high density Critical DC electrical parameters specified at elevated
process is especially tailored to minimize on-state resistance. temperature.
These devices are particularly suited for low voltage
applications such as DC/DC converters and high efficiency Rugged internal source-drain diode can eliminate the need
switching circuits where fast switching, low in-line power for an external Zener diode transient suppressor.
loss, and resistance to transients are needed.
High density cell design for extremely low RDS(ON).
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