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BD677/A/679/A/681
BD678/A/680/A/682
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s MONOLITHIC DARLINGTON
CONFIGURATION
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE

APPLICATION
s LINEAR AND SWITCHING INDUSTRIAL 1
EQUIPMENT 2
3

DESCRIPTION SOT-32
The BD677, BD677A, BD679, BD679A and
BD681 are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration
mounted in Jedec SOT-32 plastic package.
They are intended for use in medium power linar
and switching applications INTERNAL SCHEMATIC DIAGRAM
The complementary PNP types are BD678,
BD678A, BD680, BD680A and BD682
respectively.

R 1 Typ.= 7K R 2 T yp.= 230

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
NPN BD677/A BD679/A BD681
PNP BD678/A BD680/A BD682
V CBO Collector-Base Voltage (IE = 0) 60 80 100 V
V CEO Collector-Emitter Voltage (I B = 0) 60 80 100 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 4 A
I CM Collector Peak Current 6 A
IB Base Current 0.1 A
o
P t ot Total Dissipation at T c 25 C 40 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
For PNP types voltage and current values are negative.

September 1997 1/6
BD677/677A/678/678A/679/679A/680/680A/681/682

THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 3.12 C/W
o
R t hj- amb Thermal Resistance Junction-ambient Max 100 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
Collector Cut-off V CE = rated V CBO 0.2 mA
I CBO
Current (IE = 0) V CE = rated V CBO T C = 100 o C 2 mA
Collector Cut-off V CE = half rated V CEO
I CEO 0.5 mA
Current (IB = 0)
Emitter Cut-off Current V EB = 5 V
I EBO 2 mA
(I C = 0)
Collector-Emitter I C = 50 mA
Sustaining Voltage for BD677/677A/678/678A 60 V
V CEO(sus )
for BD679/679A/680/680A 80 V
for BD681/682 100 V
Collector-Emitter for BD677/678/679/680/681/682
Saturation Voltage I C = 1.5 A I B = 30 mA 2.5 V
V CE(sat )
for BD677A/678A/679A/680A
IC = 2 A IB = 40 mA 2.8 V
Base-Emitter Voltage for BD677/678/679/680/681/682
I C = 1.5 A V CE = 3 V 2.5 V
V BE
for BD677A/678A/679A/680A
IC = 2 A V CE = 3 V 2.5 V
DC Current G ain for BD677/678/679/680/681/682
I C = 1.5 A V CE = 3 V 750
h FE
for BD677A/678A/679A/680A
IC = 2 A V CE = 3 V 750
Small Signal Current I C = 1.5 A V CE = 3 V f = 1MHz
hf e 1
Gain
Pulsed: Pulse duration = 300