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AO4466
N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO4466 uses advanced trench technology to VDS (V) = 30V
provide excellent RDS(ON) and low gate charge. This ID = 9.4A (V GS = 10V)
device is suitable for use as a load switch or in PWM RDS(ON) < 23m (VGS = 10V)
applications. The source leads are separated to allow RDS(ON) < 35m (VGS = 4.5V)
a Kelvin connection to the source, which may be
used to bypass the source inductance. Standard
Product AO4466 is Pb-free (meets ROHS & Sony
259 specifications). AO4466L is a Green Product
ordering option. AO4466 and AO4466L are
electrically identical.

D
S D
S D
S D
G D
G
SOIC-8 S

Absolute Maximum Ratings TA=25