AO4704L - N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode.pdf part of Various AO4704L - N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode AO4704L - N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode.pdf, . Electronic Components Datasheets Various AO4704L - N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode.pdf text manual preview

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AO4704
N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description Features

The AO4704 uses advanced trench technology to VDS (V) = 30V
provide excellent R DS(ON), shoot-through immunity and ID = 13 A (VGS = 10V)
body diode characteristics.This device is suitable for RDS(ON) < 11.5m (VGS = 10V)
use as a synchronous switch in PWM applications. RDS(ON) < 13m (VGS = 4.5V)
The co-packaged Schottky Diode boosts efficiency
further. AO4704 is Pb-free (meets ROHS & Sony
SCHOTTKY
259 specifications). AO4704L is a Green Product
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
ordering option. AO4704 and AO4704L are
electrically identical.

D K
SOIC-8
S/A 1 8 D/K
S/A 2 7 D/K
S/A 3 6 D/K
G 4 5 D/K G
S A

Absolute Maximum Ratings T =25