Text preview for : SSM4957GM - DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS.pdf part of Various SSM4957GM - DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS . Electronic Components Datasheets Various SSM4957GM - DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS.pdf
Back to : SSM4957GM - DUAL P-CHANNE | Home
SSM4957(G)M
DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement BV DSS -30V
D2
Lower gate charge D1
D2 R DS(ON) 24m
D1
Fast switching characteristics ID -7.7A
G2
S2
SO-8 S1
G1
Description D1 D2
Advanced Power MOSFETs from Silicon Standard provide the
G1 G2
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
S1 S2
The SSM4957M is in the SO-8 package, which is widely preferred for
commercial and industrial surface mount applications, and is well suited
for low-voltage applications.
This device is available with Pb-free lead finish (second-level interconnect) as SSM4957GM.
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage