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STD60N3LH5
STP60N3LH5, STU60N3LH5
N-channel 30 V, 0.0072 48 A DPAK, IPAK, TO-220
,
STripFETTM V Power MOSFET
Features
Type VDSS RDS(on) max ID
STD60N3LH5 30 V 0.008 48 A
3
STP60N3LH5 30 V 0.0084 48 A 1
2
STU60N3LH5 30 V 0.0084 48 A TO-220
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on) 3 3
2
Very low switching gate charge 1 1
High avalanche ruggedness DPAK IPAK
Low gate drive power losses
Application
Figure 1. Internal schematic diagram
Switching applications
Description
This STripFETTMV Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
Table 1. Device summary
Order codes Marking Package Packaging
STD60N3LH5 60N3LH5 DPAK Tape and reel
STP60N3LH5 60N3LH5 TO-220 Tube
STU60N3LH5 60N3LH5 IPAK Tube
April 2009 Doc ID 14079 Rev 3 1/16
www.st.com 16
Contents STD60N3LH5, STP60N3LH5, STU60N3LH5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 14079 Rev 3
STD60N3LH5, STP60N3LH5, STU60N3LH5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS=0) 30 V
VDS Drain-source voltage (VGS = 0) @ TJMAX 35 V
VGS Gate-Source voltage