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STx30NM60ND
N-channel 600 V, 0.11 , 25 A FDmeshTM II Power MOSFET
(with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247
Features
VDSS @TJ RDS(on)
Type ID
max max
2 3 3
STB30NM60ND 25 A I PAK 12 2
1
STI30NM60ND 25 A TO-247
STF30NM60ND 650 V 0.13 25 A(1)
3
STP30NM60ND 25 A 2 1
D PAK
STW30NM60ND 25 A
1. Limited only by maximum temperature allowed
3
3
The world's best RDS(on) in TO-220 amongst TO-220 1
2
2
TO-220FP 1
the fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Figure 1. Internal schematic diagram
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
Description
The FDmeshTM II series belongs to the second
generation of MDmeshTM technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast- It is therefore strongly recommended for bridge
recovery body diode. topologies, in particular ZVS phase-shift
converters.
Table 1. Device summary
Order codes Marking Package Packaging
STB30NM60ND 30NM60ND D