fdn361bn.pdf part of Fairchild Semiconductor fdn361bn fdn361bn.pdf, . Electronic Components Datasheets Active components Transistors Fairchild Semiconductor fdn361bn.pdf text manual preview

Text preview for : fdn361bn.pdf part of Fairchild Semiconductor fdn361bn . Electronic Components Datasheets Active components Transistors Fairchild Semiconductor fdn361bn.pdf

Back to : fdn361bn.pdf | Home

FDN361BN 30V N-Channel, Logic Level, PowerTrench MOSFET
Fe bruary 2009

FDN361BN
30V N-Channel, Logic Level, PowerTrench MOSFET
General Description Features
These N-Channel Logic Level MOSFETs are produced x 1.4 A, 30 V. RDS(ON) = 110 m: @ VGS = 10 V
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored RDS(ON) = 160 m: @ VGS = 4.5 V
to minimize the on-state resistance and yet maintain
superior switching performance.
x Low gate charge
These devices are particularly suited for low voltage
applications in notebook computers, portable phones, x Industry standard outline SOT-23 surface mount
PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are package using proprietary SuperSOTTM-3 design for
needed in a very small outline surface mount package. superior thermal and electrical capabilities

x High performance trench technology for extremely
low RDS(ON)

D D

S
G S

SuperSOT -3
TM G

Absolute Maximum Ratings o
TA=25 C unless otherwise noted

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage r 20 V
ID Drain Current