fds6675.pdf part of Fairchild Semiconductor fds6675 fds6675.pdf, . Electronic Components Datasheets Active components Transistors Fairchild Semiconductor fds6675.pdf text manual preview

Text preview for : fds6675.pdf part of Fairchild Semiconductor fds6675 . Electronic Components Datasheets Active components Transistors Fairchild Semiconductor fds6675.pdf

Back to : fds6675.pdf | Home

October 1998

FDS6675
Single P-Channel, Logic Level, PowerTrenchTM MOSFET

General Description Features

This P-Channel Logic Level MOSFET is produced -11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V,
using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.020 @ VGS = -4.5 V.
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for Low gate charge (30nC typical).
superior switching performance. High performance trench technology for extremely low
These devices are well suited for notebook computer RDS(ON).
applications: load switching and power management, High power and current handling capability.
battery charging circuits, and DC/DC conversion.

SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16

D 5 4
D
D S
D F D 75 6 3
66
G 7 2
S
SO-8 pin 1 S 8 1
S

Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter FDS6675 Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage