rn1321a_rn1327a_100406.pdf part of Toshiba rn1321a rn1327a 100406 rn1321a_rn1327a_100406.pdf, . Electronic Components Datasheets Active components Transistors Toshiba rn1321a_rn1327a

Text preview for : rn1321a_rn1327a_100406.pdf part of Toshiba rn1321a rn1327a 100406 . Electronic Components Datasheets Active components Transistors Toshiba rn1321a_rn1327a_100406.pdf

Back to : rn1321a_rn1327a_100406.pd | Home

RN1321ARN1327A
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1321A,RN1322A,RN1323A,RN1324A
RN1325A,RN1326A,RN1327A

Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications Unit: mm

High current driving is possible.
Since bias resisters are built in the transistor,the miniaturization of the
apparatus by curtailment of the number of parts and laborsaving of an
assembly are possible.
Many kinds of resistance value are lined up in order to support various
kinds of circuit design.
Complementary to RN2321A to RN2327A
Low VCE(sat) enable to be low power dissipation on high current driving.

Equivalent Circuit And Bias Resistance Values

Type No. R1 (k) R2 (k)
1. BASE
RN1321A 1 1
2. EMITTER
RN1322A 2.2 2.2 3. COLLECTOR

RN1323A 4.7 4.7 JEDEC
RN1324A 10 10
JEITA SC-70
RN1325A 0.47 10
TOSHIBA 2-2E1A
RN1326A 1 10
Weight: 6 mg (typ.)
RN1327A 2.2 10

Absolute Maximum Ratings (Ta = 25