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AO4712
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM

General Description Features
TM
SRFET The AO4712 uses advanced trench
technology with a monolithically integrated Schottky VDS (V) = 30V
diode to provide excellent RDS(ON),and low gate ID =11.2A (VGS = 10V)
charge. This device is suitable for use as a low side RDS(ON) < 14.5m (VGS = 10V)
FET in SMPS, load switching and general purpose RDS(ON) < 18m (VGS = 4.5V)
applications. Standard Product AO4712 is Pb-free
(meets ROHS & Sony 259 specifications).
UIS TESTED!
Rg,Ciss,Coss,Crss Tested

D

S D
S
S
D
D G
SRFET TM Soft Recovery MOSFET:
Integrated Schottky Diode
G D

S

Absolute Maximum Ratings TA=25