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PD - 90334F
IRF230
REPETITIVE A ALANCHE AND dv/dt RATED
V JANTX2N6758
HEXFET TRANSISTORS JANTXV2N6758
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]
200V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRF230 200V 0.40 9.0A
TO-3
The HEXFET technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
Features:
The HEXFET transistors also feature all of the well estab- n Repetitive Avalanche Ratings
lished advantages of MOSFETs such as voltage control, n Dynamic dv/dt Rating
very fast switching, ease of paralleling and temperature n Hermetically Sealed
stability of the electrical parameters.
n Simple Drive Requirements
They are well suited for applications such as switching n Ease of Paralleling
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25