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IPB080N06N G IPP080N06N G
TM
"%&$!"# Power-Transistor
Product Summary
Features
V 9H .( J
P & ? F 71C 3 81A 6 A6 BF9 89 1@@<3 1C >B
5 75 ? 1BC C >7
3 9 9 ?
R , ? >=1G , ' E B9 >
5A ? /&/ Y"
P ( 3 81>>5<5>81>3 5=5>C >? A
=1<< 5<
5E
I9 0( 6
P
S ? @5A 9 C
1C 5=@5A DA
>7 1C 5
P E 1>3 85 A 54
1< 1C
P * 2 655 <
A 514 @< 9 + ? " , 3 ? =@<1>C
1C>7 9
P " 1< 75>655 13 3 ? A >7 C #
? A 49 ?
Type #* ( ( ! #* * ( ( !
Package F%IE*.+%+%* F%IE**(%+%)
Marking (0(D(.D (0(D(.D
Maximum ratings, 1C V S D>< ? C F9 B@53 954
T 5BB 85A B5 69
Parameter Symbol Conditions Value Unit
)#
? >C DB 4A > 3 DA5>C
9>D? 19 A I9 T 8 S 0( 6
T 8
S /.
*#
* D< 4A > 3 DA5>C
B54 19 A I 9$\`X^Q T 8 S +*(
7H >7< B5
E 1>3 85 5>5A B9 5 @D<
1< E 6H I 9 R =H " ,,0 Y@
I 9 V 9H .
5A ?
+ 5E B5 49 45 4v 'Pt Pv 'Pt Pi 'Pt U B . WJ'q^
T V$YMc
S
5
!1C B? DA 5 E <175
3 ? C V =H p*( J
BB9 9
* ? F5A49 @1C >
? P _[_ T 8 S *), K
) @5A 9 1>4 BCA
1C>7 ? 175 C
5=@5A DA
1C 5 T V T ^_S
S
# 3 <=1C 3 1C A #( #
9 93 57? H
)#
A 9 9 C 54 A C8 85 @ B 5 ? A
DA5>CB <=9 2 H 2 ? >4F95 F9 1>R _T@8
% / C 3 89 9 12 < C 3 1AH
, 55 67DA
9 5
+ 5E
@175
IPB080N06N G IPP080N06N G
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
-85A=13 C > 3 1B5
5B9 1>3 9? R _T@8 % % (&/ A'K
, ' E B9 > 45E3 5 ? > *
5A ? 9 R _T@6 >9
=9 =1<6 ? C 9
? @A>C
3 = * 3 ? ? <>7 1A +#
9 51 % % ,(
Electrical characteristics, 1C V S D>< ? C F9 B@53 954
T 5BB 85A B5 69
Static characteristics
A >B? DA 5 2 A
19 3 51;4? F> E <175
? C V "7G#9HH V =H . I 9
= .( % % J
!1C C 5B8? < E <175
5 8A 4 ? C V =H"_T# V 9H4V =H I 9
U *&) +&( ,
V 9H . V =H .
05A 71C E <175 4A > 3 DA5>C
? 5 ? C 19 A I 9HH % (&() ) q6
T V S
V 9H . V =H .
% ) )((
T V
S
!1C DA 5 <
5B? 3 51;175 3 DA5>C
A I =HH V =H . V 9H . % ) )(( Z6
A >B? DA 5 ? >BC 5 A BC 5
19 3 1C 5B9 1>3 R 9H"[Z# V =H
. I 9 % .&- 0 Y"
V =H
. I 9
% .&* /&/
, ' E B9 >
5A ?
!1C A BC 5
5 5B9 1>3 R= % )&- % "
fV 9Hf5*fI 9fR 9H"[Z#YMc
I]MZ^O[ZP`O_MZOQ g R^ ,/ 1, % H
I 9
+# *
5E3 5 ? > == G == G
== 5@? G *
9 H C8
+ F9 3 = ? >5 <
1H5A U = C 3 ; 3 ? @@5A1A 6 A4A >
89 51 ? 19
3 ? >>53 C >
* 9 E C 1<9 BC<19
9? B 5A9 > 9 A
3 <
+ 5E
@175
IPB080N06N G IPP080N06N G
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic characteristics
#>@DC 1@13 9 5
3 C1>3 C U^^ % *.(( +-(( \<
V =H . V 9H .
) DC 3 1@13 9 5
@DC C1>3 C [^^ % ..( 00(
f
' " I
+ 5E B5 C
5A A 1>B6 3 1@13 9 5
5A C1>3 C ]^^ % ).( *,(
-DA > 45< C
>? 1H 9
=5 t P"[Z# % ), *( Z^
+9 C
B5 9
=5 t] V 99 . V =H
. % )- *+
-DA 6 45< C
>? 6 1H 9
=5 t P"[RR# I 9 R =
" % +* -(
1< C
<9 =5 tR % ), *(
!1C 81A 81A C 9 9B,#
5 S5 13 5ABC3
!1C C B? DA 5 3 81A
5 ? 3 75 Q S^ % ), )1 Z8
!1C 3 81A 1C8A
5 75 C 5B8? <
4 Q S"_T# % 0 )(
!1C C 4A > 3 81A
5 ? 19 75 Q SP V 99 . I 9 % *1 ,+
Q ^b V =H C
.
?
C >7
3
, F9 89 3 81A75 % +- -*
5
!1C 3 81A CC
75 ? 1< QS % /( 1+
!1C @< 51D E <175
5 1C ? C V \XM_QM` % -&, % J
@DC
) DC 3 81A75 Q [^^ V 99 . V =H . *. +-
Reverse Diode
9 45 3 ? >C DB 6 A 4 3 DA5>C
? 9>? ? F1A A IH % % 0( 6
T 8 S
9 45 @D< 3 DA5>C
? B5 A I H$\`X^Q % % +*(
V =H . I <
9 45 6 A 4 E <175
? ? F1A ? C V H9 % (&1) )&+ J
T V S
+ 5E B5 A ? E H C
5A 53 5A 9 =5 t ]] V G . I <4I H % -+ .- Z^
Q ]] Pi <'Pt
U B
5A 53 5A 75
+ 5E B5 A ? E H 3 81A % 0- ))( Z8
,#
, 55 67DA
6 A71C 3 81A @1A
9 5 ? 5 75 1=5C 456>9? >
5A 9 C 9
+ 5E
@175
IPB080N06N G IPP080N06N G
1 Power dissipation 2 Drain current
P _[_4R"T 8# I 94R"T 8 V =H"
.
250 90
80
200
70
60
150
50
P tot [W]
I D [A] 40
100
30
20
50
10
0 0
0 50 100 150 200 0 50 100 150 200
T C [