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PD - 90335F
IRF330
REPETITIVE A ALANCHE AND dv/dt RATED
V JANTX2N6760
HEXFET TRANSISTORS JANTXV2N6760
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]
400V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRF330 400V 1.00 5.5A
The HEXFETtechnology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis- TO-3
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature Features:
stability of the electrical parameters. n Repetitive Avalanche Ratings
They are well suited for applications such as switching n Dynamic dv/dt Rating
power supplies, motor controls, inverters, choppers, audio n Hermetically Sealed
amplifiers and high energy pulse circuits. n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25