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Si4800
N-channel enhancement mode field-effect transistor
M3D315 Rev. 01 -- 13 July 2001 Product data




1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM1 technology.

Product availability:
Si4800 in SOT96-1 (SO8).


2. Features
s Low on-state resistance
s Fast switching
s TrenchMOSTM technology.


3. Applications
s DC to DC convertors
s DC motor control
c
s Lithium-ion battery applications
c

s Notebook PC
s Portable equipment applications.


4. Pinning information
Table 1: Pinning - SOT96-1, simplified outline and symbol
Pin Description Simplified outline Symbol
1,2,3 source (s)
8 5 d
4 gate (g)
5,6,7,8 drain (d)
g

1 4
Top view MBK187 MBB076 s

SOT96-1 (SO8)




1. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors Si4800
N-channel enhancement mode field-effect transistor


5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150