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Philips Semiconductors Product specification

N-channel enhancement mode IRFZ24N
TrenchMOSTM transistor

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using VDS Drain-source voltage 55 V
'trench' technology. The device ID Drain current (DC) 17 A
features very low on-state resistance Ptot Total power dissipation 45 W
and has integral zener diodes giving Tj Junction temperature 175