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FDS5680
July 1999

FDS5680
60V N-Channel PowerTrenchTM MOSFET

General Description Features
This N-Channel MOSFET is produced using Fairchild 8 A, 60 V. RDS(ON) = 0.020 @ VGS = 10 V
Semiconductor's advanced PowerTrench process that
RDS(ON) = 0.025 @ VGS = 6 V.
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance. Low gate charge (30nC typical).

These devices are well suited for low voltage and battery Fast switching speed.
powered applications where low in-line power loss and High performance trench technology for extremely
fast switching are required.
low RDS(ON).

Applications High power and current handling capability.

DC/DC converter
Load switch
Motor drives

D
D 5 4
D
D 6 3

7 2
G
S 8 1
S
SO-8 S

Absolute Maximum Ratings TA = 25